Semiconductor device including a plurality of interconnection layers

ABSTRACT

A semiconductor device including an interconnection structure having superior electrical characteristics and allowing higher speed of operation and lower power consumption even when miniaturized, manufacturing method thereof and a method of designing a semiconductor circuit used in the manufacturing method are provided. In the semiconductor device, a conductive region is formed on a main surface of a semiconductor substrate. A first interconnection layer is electrically connected to the conductive region, has a relatively short line length, and contains a material having relatively high electrical resistance. A first insulator is formed to surround the first interconnection layer and has a relatively low dielectric constant. A second interconnection layer is formed on the main surface of the semiconductor substrate, contains a material having low electrical resistance than the material contained in the first interconnection layer, and has longer line length than the first interconnection layer. A second insulator is formed to surround the second interconnection layer and has a dielectric constant higher than the first insulator.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a CMOS logic circuit element, asemiconductor device, manufacturing method thereof and to a method ofdesigning a semiconductor circuit used in the manufacturing method. Morespecifically, the present invention relates to a CMOS logic circuitdevice, a semiconductor device, manufacturing method thereof and amethod of designing a semiconductor circuit used in the manufacturingmethod enabling higher speed of operation and reduced power consumptionand preventing degradation of electrical characteristics, even when thedevices are miniaturized.

2. Description of the Background Art

Higher degree of miniaturization, higher speed of operation and lowerpower consumption have been increasingly desired in semiconductordevices such as represented by CMOS logic circuit devices and DRAMs(Dynamic Random Access Memory). To meet such demands, developments havebeen made in improving transistor performance, reduction in parasiticcapacitance of interconnection layers and reduction of line resistance.

FIG. 19 is a schematic cross section representing a multi-layeredinterconnection structure of a semiconductor device related to thepresent invention. Referring to FIG. 19, in the semiconductor device, ona first interlayer insulating film 146 a, a first interconnection 145 aof aluminum is formed. On the first interconnection 145 a, secondinterconnections 145 b to 145 d of aluminum are formed with a secondinterlayer insulating film 146 b interposed. On second interconnections145 b to 145 d, a third interconnection 145 e is formed with a secondinterlayer insulating film 146 b. On the third interconnection 145 e, athird interlayer insulating film 146 c is formed. Here, secondinterconnections 145 b to 145 d are formed to extend in a directionapproximately orthogonal to the direction of extension of the first andthird interconnections 145 a and 145 e.

Referring to FIG. 19, as the semiconductor devices have beenminiaturized, a space S between interconnections becomes smaller. As thespace S between interconnections becomes smaller, total parasiticcapacitance Ctot (hereinafter referred to as total capacitance) ofinterconnection 145 c has been increasing. Here, the total capacitanceCtot is represented as the total sum of parasitic capacitance Cc formedbetween interconnections 145 b and 145 d adjacent in horizontaldirection, parasitic capacitance Ctop formed between interconnections145 e and 145 c, and parasitic capacitance Cbot formed betweeninterconnections 145 a and 145 c. When the space S betweeninterconnections is made small, the ratio of parasitic capacitance Ccwith respect to total capacitance Ctot attains as high as about 80%.

Therefore, conventionally, in order to reduce the parasitic capacitanceCc between interconnections in the horizontal direction, a proposal hasbeen made to place an insulator having relatively low dielectricconstant such as a silicon oxide film to which fluorine added (SiOF)between adjacent interconnections, so as to reduce parasitic capacitanceCc in the horizontal direction.

The insulator having low dielectric constant such as SiOF, however,involves larger amount of leakage current as compared with theconventionally used silicon oxide film and, further, it suffers from theproblem of high reactivity with the material such as aluminum ofinterconnections 145 a to 145 e. Accordingly, a multi-layeredinterconnection structure of a semiconductor device such as shown inFIG. 20 has been proposed.

FIG. 20 is a schematic cross section showing another example of themulti-layered interconnection structure of a semiconductor devicerelated to the present invention. Referring to FIG. 20, thesemiconductor device basically has the similar structure as thesemiconductor device of FIG. 19. In the semiconductor device shown inFIG. 20, however, surfaces of second interconnections 145 b to 145 d arecovered by portions 157 a to 157 c of the interlayer insulating film,which are parts of the conventional interlayer insulating film 146 b ofsilicon oxide. Insulators 156 a to 156 d having low dielectric constantsuch as SiOF, having lower dielectric constant than silicon oxide filmconstituting the interlayer insulating film 146 b, are arranged betweeninterconnections 145 b to 145 d. On second interlayer insulating film146 b and insulators 156 a to 156 d of low dielectric constant, aninterlayer insulating film 146 d of silicon oxide is formed.

In this manner, as insulators 156 a to 156 d having low dielectricconstant are arranged between interconnections 145 b to 145 d, parasiticcapacitance Cc in the horizontal direction of interconnection 145 c canbe effectively reduced. Further, as portions 157 a to 157 c ofinterlayer insulating film formed of silicon oxide are formed betweeninterconnections 145 b to 145 d and insulators 156 a to 156 d of lowdielectric constant, direct contact between interconnections 145 b to145 d with insulators 156 a to 156 d of low dielectric constant can beprevented. Therefore, reaction between interconnections 145 b to 145 dand insulators 156 a to 156 d having low dielectric constant can beprevented. Accordingly, degradation of electrical characteristics of thesemiconductor device caused by fluctuation of electrical characteristicsof interconnections 145 b to 145 d can be prevented.

While the semiconductor devices has been miniaturized with the parasiticcapacitance of interconnections reduced, cross sectional area of theinterconnection itself has been reduced, as the semiconductor deviceshas been miniaturized. Smaller cross sectional area of theinterconnection leads to increased line resistance, which causesdegradation of electrical characteristic such as slower speed ofoperation of the semiconductor device, which is a significant problem.For this reason, use of copper having lower resistance as the materialof interconnection in place of conventionally used aluminum, has beenstudied. When copper is used as the material of the interconnection,line resistance can be decreased even when the interconnection has thesame cross sectional area as the aluminum interconnection. Accordingly,higher speed of operation and lower power consumption of thesemiconductor device can be attained.

In Damascene process used generally in forming copper interconnection, asilicon nitride film or the like is used as an etching stopper in theprocess. The silicon nitride film remains in the interlayer insulatingfilm even after the copper interconnection is completed. Here, thesilicon nitride film has higher dielectric constant than the siliconoxide film which has been conventionally used as the interlayerinsulating film. Therefore, in view of parasitic capacitance ofinterconnections, sometimes the total capacitance Ctot attains higherthan in the conventional example, when copper interconnection is formed.The inventors have found that, as a result, it is difficult to obtain asemiconductor device having superior electrical characteristics andallowing higher speed of operation and lower power consumption simply byreplacing the conventional aluminum interconnection with copperinterconnection.

When the interconnection is formed using copper, a barrier metal layeris formed on the surface of the interconnection, in order to preventdiffusion of copper to the interlayer insulating film. Here, the barriermetal layer must have a minimum film thickness to maintain its function.Generally, a material for the barrier metal layer has higher electricalresistance than copper. As the semiconductor devices have beenminiaturized, the ratio of barrier metal layer with respect to the crosssectional area of the interconnection increases, and therefore influenceof the barrier metal layer on the line resistance comes to benon-negligible. Line resistance may be out of the designed range becauseof variation in film thickness of the barrier metal layer. The inventorshave also found that this leads to the problem of degraded electricalcharacteristics of the semiconductor device.

SUMMARY OF THE INVENTION

One object of the present invention is to provide a semiconductor deviceincluding an interconnection structure having superior electricalcharacteristics allowing higher speed of operation and lower powerconsumption even when the device is miniaturized.

Another object of the present invention is to provide a CMOS logiccircuit device including an interconnection structure having superiorelectrical characteristics allowing higher speed of operation and lowerpower consumption even when miniaturized.

A further object of the present invention is to provide a method ofmanufacturing a semiconductor device including an interconnectionstructure having superior electrical characteristics allowing higherspeed of operation and lower power consumption even when miniaturized.

A still further object of the present invention is to provide a methodof designing a semiconductor circuit used in the method of manufacturingthe semiconductor device including an interconnection structure havingsuperior electrical characteristics allowing higher speed of operationand lower power consumption even when miniaturized.

The semiconductor device according to the aforementioned one aspect ofthe present invention includes a semiconductor substrate, a conductiveregion, a first interconnection layer, a first insulator, a secondinterconnection layer and a second insulator. The semiconductorsubstrate has a main surface. The conductive region is formed on themain surface of the semiconductor substrate. First interconnection layeris electrically connected to the conductive region, has a relativelyshort line length, and contains a material having relatively highelectrical resistance. The first insulator is formed to surround thefirst interconnection layer and has a relatively low dielectricconstant. The second interconnection layer is formed on the main surfaceof the semiconductor substrate, contains a material having lowerelectrical resistance than the material contained in the firstinterconnection layer, and has longer line length than the firstinterconnection layer. The second insulator is formed to surround thesecond interconnection layer and has higher dielectric constant than thefirst insulator.

Here, in the first interconnection layer having relatively short linelength such as a short interconnection within a circuit block, forexample, it is necessary to reduce the distance between interconnectionsas small as possible, as the degree of integration of the circuitelements is increased. When the distance between interconnections isreduced, reduction in parasitic resistance between interconnections isparticularly effective in improving the speed of operation of thesemiconductor device.

In the semiconductor device in accordance with one aspect of the presentinvention, as a first insulator having relatively low dielectricconstant is formed to surround a first interconnection layer havingrelatively short line length, parasitic resistance betweeninterconnections of the first interconnection layer can be made smallerthan the parasitic resistance between interconnections of the secondinterconnection layer. As a result, the speed of operation of thesemiconductor device can effectively be improved. Therefore, asemiconductor device having such an interconnection structure thatensures superior electrical characteristics can be obtained.

Further, the second interconnection layer which has longer line lengththan the first interconnection layer contains material having lowelectrical resistance than the material contained in the firstinterconnection layer, and therefore the line resistance of the secondinterconnection layer can be made lower than that of the firstinterconnection layer. Here, in the second interconnection layer whichcorresponds to the long line such as interconnections between circuitblocks, reduction in line resistance is more effective in improving thespeed of operation of the semiconductor device. Therefore, thesemiconductor device in accordance with one aspect of the presentinvention enables higher speed of operation.

Further, by reducing line resistance, power consumption of thesemiconductor device can be reduced. As a result, a semiconductor devicehaving such an interconnection structure that ensures superiorelectrical characteristics can be obtained.

In the semiconductor device in accordance with the above described oneaspect, the second and the first interconnection layers may be formed ondifferent layers on the main surface of the semiconductor substrate.

Here, as the first and second interconnection layers of mutuallydifferent line lengths are formed in different layers, theinterconnection structure in the semiconductor device can be simplifiedas compared when the first and second interconnection layers ofdifferent line lengths are formed in one layer.

When the first and second interconnection layers are formed in differentlayers in this manner, an insulator in one layer can be formed by onematerial, even when the first and second insulators are to be formed bydifferent materials. Therefore, it is possible to form the first andsecond insulators through the same process steps as in the conventionalprocess for forming insulators. Therefore, the steps of manufacturingthe semiconductor device are not complicated. As a result, the number ofsteps for manufacturing the semiconductor device is not increased, andtherefore increase in cost in manufacturing the semiconductor device canbe prevented.

In the semiconductor device in accordance with the above described oneaspect, the second interconnection layer may be formed in a layer upperthan the layer in which the first interconnection layer is formed.

In this case, the first interconnection layer having relatively shortline length is formed at a region closer to the elements on thesemiconductor substrate. The second interconnection layer correspondingto the long distance interconnection for connecting circuit blocks isformed upper than the first interconnection layer, and therefore theinterconnection path of the second interconnection layer can beminiaturized without much adverse influence of the arrangement of thefirst interconnection layer. Therefore, total line length can be reducedthan when the first interconnection layer is formed upper than thesecond interconnection layer. As a result, higher speed of operation andlower power consumption of the semiconductor device can be attained.

In the semiconductor device in accordance with the above described oneaspect, the second insulator may be positioned above and below thesecond interconnection layer.

In the semiconductor device in accordance with the above described oneaspect, the first interconnection layer may include aluminum, and thesecond interconnection layer may include copper.

Here, copper has lower electrical resistance than the conventionalinterconnection material of aluminum, and has longer electro migrationlife. Further, the material cost is lower and is superior as aninterconnection material. As the second interconnection layer containscopper, higher speed of operation and lower power consumption of thesemiconductor device can be ensured.

Further, as the first interconnection layer contains aluminum, themanufacturing apparatuses and processes for forming the conventionalaluminum interconnection can be used directly, when the firstinterconnection layer is formed. Therefore, the semiconductor device inaccordance with the present invention can be manufactured easily.

In the semiconductor device in accordance with the above described oneaspect, the second insulator may contain a silicon nitride film.

The silicon nitride film may be used as an etching stopper in theDamascene process for forming the second interconnection layercontaining copper. Therefore, the second interconnection layercontaining copper can be readily formed.

In the semiconductor device in accordance with the above described oneaspect, the first insulator may include a silicon oxide film.

In the semiconductor device in accordance with the above described oneaspect, cross sectional area of the second interconnection layer may bethe same or larger than the cross sectional area of the firstinterconnection layer.

Here, when the second interconnection layer corresponding to the longdistance interconnection such as the line for connecting circuit blocksis adapted to have larger cross sectional area than the firstinterconnection layer, line resistance of the second interconnectionlayer can further be reduced. Therefore, higher speed of operation andlower power consumption of the semiconductor device can be attained.

In the semiconductor device in accordance with the above described oneaspect, the first interconnection layer may include third and fourthinterconnection layers, and the second interconnection layer may includefifth and sixth interconnection layers. The distance between the fifthand sixth interconnection layers may be the same or longer than thedistance between the third and fourth interconnection layers.

Here, in the second interconnection layer corresponding to the longdistance interconnection such as the line for connecting circuit blocks,the distance between interconnections may be made larger than in thefirst interconnection layer, and therefore parasitic resistance betweenlines in the second interconnection layer can surely be reduced. As aresult, higher speed of operation of the semiconductor device can beattained.

In the semiconductor device in accordance with the above described firstaspect, the second interconnection layer may have one side surface andthe other side surface positioned opposite to the one side surface, andbarrier metal layers may be formed on one and the other side surfaces.Total film thickness BM of the barrier metal layer may be selected tosatisfy the relation of BMmin/W≦BM/W≦1−(K/(K−1))×ΔW/W, where Wrepresents set line width of the second interconnection layer in adirection approximately vertical to the one side surface, BM representstotal film thickness of the barrier metal layer formed on the one andthe other side surfaces, BMmin represents minimum necessary filmthickness of the barrier metal layer and K represents tolerable rate ofincrease in resistance of the second interconnection layer when the setline width W is decreased by ΔW.

Here, line resistance R of a portion having the length l of a conductiveline of uniform property with uniform cross sectional area S is given bythe following equation (1), where ρ represents specific resistance.

When the thickness of the second interconnection layer is represented byT, resistance per unit length of the second interconnection layer isgiven by the following equation (2).

The resistance per unit length when the set line width W of the secondinterconnection layer is decreased by ΔW is represented by the followingequation (3).

As the tolerable rate of increase of the resistance of the secondinterconnection layer when the set line width W is decreased by ΔW isgiven by K, the second interconnection layer must satisfy the relationrepresented by the expression (4). The expression can be transformed toexpression (5).

As the minimum necessary film thickness of the barrier metal layer isBMmin, the total film thickness BM of the barrier metal layer must alsosatisfy the relation represented by the expression (6).

As a result, if the total film thickness BM of the barrier metal layeris determined to satisfy the relation of expression (7), it becomespossible for the barrier metal layer to exhibit its function and for therate of increase in resistance of the second interconnection layer to benot higher than the tolerable ratio K. $\begin{matrix}{R = {\frac{L}{S} \times \rho}} & (1) \\\frac{\rho}{\left( {W - {BM}} \right) \times T} & (2) \\\frac{\rho}{\left( {W - {\Delta \quad W} - {BM}} \right) \times T} & (3) \\{\frac{\rho}{\left( {W - {\Delta \quad W} - {BM}} \right) \times T} \leqq {K \times \frac{\rho}{\left( {W - {BM}} \right) \times T}}} & (4) \\{\frac{BM}{W} \leqq {1 - {\frac{K}{K - 1} \times \frac{\Delta \quad W}{W}}}} & (5) \\{\frac{{BM}\min}{W} \leqq \frac{BM}{W}} & (6) \\{\frac{{BM}\min}{W} \leqq \frac{BM}{W} \leqq {1 - {\frac{K}{K - 1} \times \frac{\Delta \quad W}{W}}}} & (7)\end{matrix}$

In the semiconductor device in accordance with the above described oneaspect, the second interconnection layer has a bottom surface on which abottom barrier metal layer is formed. Film thickness BMT of the bottombarrier metal layer may be selected to satisfy the relation ofBMmin/T≦BMT/T≦1−(KT/(KT−1))×ΔT/T, where T represents set film thicknessof the second interconnection layer in a direction approximatelyvertical to the bottom surface, BMT represents film thickness of thebottom barrier metal layer, BMTmin represents minimum necessary filmthickness of the bottom barrier metal layer and KT represents tolerablerate of increase in resistance of the second interconnection layer whenthe set film thickness T is decreased by ΔT.

In this case also, as in the method of determining the total filmthickness BM of the barrier metal layer described above, in order forthe rate of increase in resistance of the second interconnection layerto be not higher than the tolerable rate of increase KT when the setfilm thickness T of the second interconnection layer is decreased by ΔT,the film thickness BMT of the bottom barrier metal layer must beselected to satisfy the relation given by the expression (8). Theexpressions described above can be transformed to expression (9) below.

As the minimum necessary film thickness of the bottom barrier metallayer is BMTmin, the film thickness BMT of the bottom barrier metallayer must also satisfy the relation represented by the expression (10).

As a result, if the film thickness BMT of the barrier metal layer isdetermined to satisfy the relation (11), it is possible for the bottombarrier metal layer to exhibit necessary function and for the rate ofincrease in resistance of the second interconnection layer to be nothigher than the tolerable rate of increase KT. $\begin{matrix}{\frac{\rho}{\left( {W - {BM}} \right) \times \left( {T - {\Delta \quad T} - {BMT}} \right)} \leqq {{KT} \times \frac{\rho}{\left( {W - {BM}} \right) \times \left( {T - {BMT}} \right)}}} & (8) \\{\frac{BMT}{T} \leqq {1 - {\frac{KT}{{KT} - 1} \times \frac{\Delta \quad T}{T}}}} & (9) \\{\frac{BMTmin}{W} \leqq \frac{BMT}{T}} & (10) \\{\frac{BMTmin}{T} \leqq \frac{BMT}{T} \leqq {1 - {\frac{KT}{{KT} - 1} \times \frac{\Delta \quad T}{T}}}} & (11)\end{matrix}$

In a method of designing a semiconductor circuit in accordance withanother aspect of the present invention is to design a semiconductordevice including a first interconnection layer having relatively shortline length, a first insulator formed to surround the firstinterconnection layer, a second interconnection layer having longer linelength than the first interconnection layer and a second insulatorformed to surround the second interconnection layer, and the methodincludes the following steps. A first interconnection structure patternincluding a plurality of interconnection layers having a prescribeddistance between interconnection lines and containing a specifiedmaterial, and an insulator formed to surround each of the plurality ofinterconnection layers and containing a specified material is prepared.A second interconnection structure pattern including a plurality ofinterconnection layers having approximately the same distance betweeninterconnection lines as the distance between interconnection lines ofthe first interconnection structure pattern and containing a specificmaterial, and an insulator formed to surround each of the plurality ofinterconnection layers and containing a specific material is prepared.In the first interconnection structure pattern, a first parasiticcapacitance of each interconnection layer is calculated. In the secondinterconnection structure pattern, a second parasitic capacitance foreach interconnection layer is calculated. The material of theinterconnection layer of the first or second interconnection structurepattern having smaller one of the first and second parasiticcapacitances is selected as a material to be contained in the firstinterconnection layer. A material of the insulator in the first orsecond interconnection structure pattern having smaller one of the firstand second parasitic capacitances is selected as a material to becontained in the first insulator.

Accordingly, it is possible to provide a semiconductor circuit havingsmaller parasitic capacitance in the first interconnection layer ofwhich reduction in parasitic capacitance is effective in improving speedof operation of the semiconductor device. As a result, higher speed ofoperation of the semiconductor device can readily be attained.Accordingly, a semiconductor device having an interconnection structureof superior electrical characteristics can be obtained.

The method of designing a semiconductor circuit in accordance with theabove described another aspect may further includes the following steps.The first line resistance of each interconnection layer in the firstinterconnection structure pattern is calculated. The second lineresistance of each interconnection layer of the second interconnectionstructure pattern is calculated. By multiplexing the first parasiticcapacitance and the first line resistance, a first evaluation value iscalculated for the first interconnection structure pattern. Bymultiplexing the second parasitic capacitance and the second lineresistance in the second interconnection structure pattern, a secondevaluation value is calculated. The material of the interconnectionlayer of the first or second interconnection structure patterns havingsmaller one of the first and second evaluation values is used as thematerial to be contained in the second interconnection layer. Thematerial of the insulator in the first or second interconnectionstructure pattern having smaller one of the first and second evaluationvalue is selected as a material to be contained in the second insulator.

Here, a semiconductor circuit having a small evaluation value for thesecond interconnection layer can readily be obtained. Here, the secondinterconnection layer has longer line length than the firstinterconnection layer, and corresponds to the lines for connectingcircuit blocks. In the second interconnection layer having relativelylong line length, it is effective to improve speed of operation andlower power consumption of the semiconductor device to reduce theevaluation value obtained by multiplexing the parasitic capacitance andthe line resistance. Therefore, a semiconductor device adapted toimprove speed of operation and to reduce power consumption can readilybe obtained.

In the method of designing a semiconductor circuit in accordance withthe above described another aspect, the first and second interconnectionstructure patterns may be one selected from the group consisting of aninterconnection structure pattern using aluminum as the material of theinterconnection layer, an interconnection structure pattern using copperas the material of the interconnection layer, and an interconnectionstructure pattern using copper as the material of the interconnectionlayer with film thickness of the interconnection layer being determinedto attain approximately the same line resistance as the interconnectionlayer of the interconnection structure pattern using aluminum as thematerial of the interconnection layer.

Here, higher speed of operation and lower power consumption can readilybe attained in a semiconductor circuit using, as a material of theinterconnection layer, aluminum or copper.

In the method of designing a semiconductor circuit in accordance withthe above described another aspect, the distance betweeninterconnections may be approximately the same as the minimum processingdimension in the step of photolithography used in manufacturing asemiconductor device.

In the method of manufacturing a semiconductor device in accordance witha further aspect of the present invention, the method of designing asemiconductor circuit in accordance with the above described anotheraspect is utilized.

Therefore, even when miniaturized, a semiconductor device attaininghigher speed of operation and lower power consumption can readily beobtained.

The semiconductor device in accordance with a still further aspect ofthe present invention includes an interconnection layer and a barriermetal layer. The interconnection layer has one side surface and theother side surface positioned opposite to the one side surface. Thebarrier metal layer is formed on the one side surface and the other sidesurface. Total film thickness BM of the barrier metal layer is selectedto satisfy the relation of BMmin/W≦BM/W≦1−(K/(K−1))×ΔW/W, where Wrepresents set line width of the interconnection layer in a directionapproximately vertical to the one side surface, BM represents total filmthickness of the barrier metal layer formed on the one side surface andthe other side surface, BMmin represents minimum necessary filmthickness of the barrier metal layer and K represents tolerable rate ofincrease in resistance of the interconnection layer when the set linewidth W is decreased by ΔW.

Therefore, as in the semiconductor device in accordance with the abovedescribed one aspect, the total film thickness BM of the barrier metallayer is selected to satisfy the above described relation, and thereforethe function of the barrier metal layer is surely exhibited, and theratio of increase in the line resistance can be made not higher than thetolerable ratio of increase K. Therefore, increase in line resistance tobe higher than that tolerable ratio of increase K can surely beprevented. As a result, degradation of electrical characteristics suchas lower speed of operation of the semiconductor device caused by theincreased line resistance can surely be prevented.

In the semiconductor device in accordance with the above described stillfurther aspect, the interconnection layer has a bottom surface on whicha bottom barrier metal layer is formed. Total film thickness BMT of thebottom barrier metal layer may be selected to satisfy the relation ofBMmin/T≦BMT/T≦1−(KT/(KT−1))×ΔT/T, where T represents set film thicknessof the interconnection layer in a direction approximately vertical tothe bottom surface, BMT represents film thickness of the bottom barriermetal layer, BMTmin represents minimum necessary film thickness of thebottom barrier metal layer and KT represents tolerable rate of increasein resistance of the interconnection layer when the set film thickness Tis decreased by ΔT.

In this case, as in the semiconductor device in accordance with theabove described one aspect, the total film thickness BMT of the bottombarrier metal layer is selected to satisfy the above described relation.Therefore, the barrier metal layer surely exhibits its functions and therate of increase in the resistance of interconnection layer can be madenot higher than the tolerable rate of increase KT.

A CMOS (Complementary Metal Oxide Semiconductor) logic circuit device inaccordance with a still further aspect of the present invention includesa semiconductor substrate, a conductive region, a first interconnectionlayer, a first insulator, a second interconnection layer and a secondinsulator. The semiconductor substrate has a main surface. Theconductive region is formed on the main surface of the semiconductorsubstrate. The first interconnection layer is electrically connected tothe conductive region, has a relatively short line length and contains amaterial having relatively high electrical resistance. The firstinsulator is formed to surround the first interconnection layer and hasrelatively low dielectric constant. The second interconnection layer isformed on the main surface of the semiconductor substrate, contains amaterial having lower electrical resistance than the material containedin the first interconnection layer, and has longer line length than thefirst interconnection layer. The second insulator is formed to surroundthe second interconnection layer and has higher dielectric constant thanthe first insulator.

Therefore, the CMOS logic circuit device in accordance with the stillfurther aspect provides similar effects as provided by the semiconductordevice in accordance with the above described one aspect, as the logiccircuit device has similar structure as the semiconductor device.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an equivalent circuit diagram of a semiconductor circuitstudied by the inventors.

FIG. 2 is a schematic cross section representing an example of aninterconnection shown in FIG. 1.

FIG. 3 is a schematic cross section representing another example of theinterconnection shown in FIG. 1.

FIG. 4 is a graph representing relation between line length and ratio ofinverter delay time in the circuit shown in FIG. 1.

FIG. 5 is a schematic cross section representing a first embodiment ofthe semiconductor device in accordance with the present invention.

FIG. 6 is a schematic cross section representing a modification of thefirst embodiment of the semiconductor device in accordance with thepresent invention.

FIG. 7 is a schematic plan view representing the first embodiment of thesemiconductor device in accordance with the present invention.

FIG. 8 is a process flow chart related to the second embodiment of amethod of designing a semiconductor circuit in accordance with thepresent invention.

FIG. 9 is a process flow chart representing a modification of the secondembodiment of the method of designing a semiconductor circuit inaccordance with the present invention.

FIGS. 10 to 12 are schematic cross sections representing first to thirdpatterns of interconnection structures used in the method of designing asemiconductor circuit in accordance with the present invention shown inFIGS. 8 and 9, respectively.

FIG. 13 is a graph representing an example of the result of calculationof parasitic capacitances in the first to third patterns of theinterconnection structure shown in FIGS. 10 to 12.

FIG. 14 is a graph showing another example of the result of calculationof parasitic capacitances in the first to third patterns of theinterconnection structure shown in FIGS. 10 to 12.

FIG. 15 is a graph representing a relation between interconnection filmthickness and line resistance.

FIG. 16 is a schematic cross section of an AlCu interconnection which isthe base of the data shown in FIG. 15.

FIG. 17 is a schematic cross section of a Cu interconnection which isthe base of the data shown in FIG. 15.

FIG. 18 is a graph showing relation between interconnection filmthickness and parasitic capacitance.

FIG. 19 is a schematic cross section representing a multi-layeredinterconnection structure of a semiconductor device related to thepresent invention.

FIG. 20 is a schematic cross section showing another example of amulti-layered interconnection structure of a semiconductor devicerelated to the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described in the followingwith reference to the figures.

First Embodiment

The inventors studied the relation between the speed of operation of asemiconductor device and interconnection structure and materials of theinsulator and interconnection layers of the semiconductor device. Morespecifically, relation between inverter delay time and line length andinterconnection material of such a circuit as shown in FIG. 1 has beenstudied by simulation.

Referring to FIG. 1, the circuit studied by the inventors includes aplurality of inverter circuits 53 a and 53 b. Inverter circuits 53 a and53 b are connected in series by an interconnection 55. Inverter circuit53 a includes a p type MOS transistor 54 a and an n type MOS transistor56 a. Inverter circuit 53 b includes a p type MOS transistor 54 b and ann type MOS transistor 56 b.

The interconnection structure of the semiconductor circuit studied bythe inventors will be described with reference to FIGS. 2 and 3.

Referring to FIG. 2, one of the interconnection structures studied bythe inventors includes interconnections 45 a and 45 b of aluminum formedsurrounded by an interlayer insulating film 46 of fluorine added siliconoxide film (SiOF). Interconnections 45 a and 45 b have film thickness T1of 0.53 μm. Interconnections 45 a and 45 b have line width W1 of 0.3 μm.Distance S1 between the interconnections is 0.3 μm. Interlayerinsulating film 46 has specific dielectric constant of about 3.5.

The interconnection formed of aluminum having such a cross sectionalshape was used as the interconnection 55 of the circuit shown in FIG. 1,and inverter delay time of the circuit shown in FIG. 1 was measured withthe line length of interconnection 55 varied. The result is as shown inFIG. 4.

The inventors also studied an interconnection using copper as theinterconnection material. FIG. 3 shows a cross sectional structure ofthe interconnection using copper.

Referring to FIG. 3, interconnections 48 a and 48 b of copper are formedto be surrounded by an interlayer insulating film 46 formed of SiOF. Itis noted that above and below interconnections 48 a and 48 b, siliconnitride films 57 a and 57 b serving as an etching stopper in Damasceneprocess for forming the copper interconnections 48 a and 48 b areformed. Film thickness T2, line width W2 and distance S2 betweeninterconnections of interconnections 48 a and 48 b are the same as filmthickness T1, line width W1 and distance S1 of the interconnections 45 aand 45 b in the interconnection structure shown in FIG. 2, respectively.Film thickness T3 of silicon nitride films 57 a and 57 b is 50 nm.

The interconnection formed of copper having such cross sectional shapewas used as the interconnection 55 of the circuit shown in FIG. 1, andinverter delay time in the circuit shown in FIG. 1 was measured in thesimilar manner with the line length of interconnection 55 varied. Theresult is as shown in FIG. 4.

Referring to FIG. 4, the abscissa represents line length ofinterconnection 55 (see FIG. 1), and the ordinate represents the ratioof inverter delay time (tpd) when the aluminum interconnection and thecopper interconnection of the same line length were used.

Referring to FIG. 4, up to the line length of about 3 mm, theinterconnection formed of aluminum has shorter inverter delay time thanthe interconnection of copper.

Here, referring to FIGS. 2 and 3, as to line resistance, line resistanceof copper interconnections 48 a and 48 b is smaller than the lineresistance of aluminum interconnections 45 a and 45 b. As to theinsulator formed to surround interconnections 45 a, 45 b, 48 a and 48 b,in the interconnection structure shown in FIG. 2, only the interlayerinsulating film 46 is formed around interconnections 45 a and 45 b. Inthe interconnection structure in FIG. 3, interlayer insulating film 46and silicon nitride films 57 a, 57 b are formed around interconnections48 a and 48 b. Silicon nitride films 57 a and 57 b have specificdielectric constant of about 7 to about 9, which is higher than that ofSiOF or silicon oxide film, used as the interlayer insulating film 46.Therefore, in the interconnection structure shown in FIG. 3, the overallspecific dielectric constant of the insulator formed aroundinterconnections 48 a and 48 b is higher than the specific dielectricconstant of the insulator in the interconnection structure shown in FIG.2. As a result, in the interconnection structure shown in FIG. 3,parasitic capacitance of interconnections 48 a and 48 b is larger thanthe parasitic capacitance of interconnections 45 a and 45 b in theinterconnection structure of FIG. 2.

As can be seen from FIG. 4, for a short interconnection having the linelength of shorter than 3.0 mm, inverter delay time is smaller whenaluminum interconnections 45 a, 45 b such as shown in FIG. 2 are used,than when copper interconnection is used. This represents that for ashort interconnection, reduction in parasitic capacitance of theinterconnection is more effective in reducing inverter delay time, thatis, in improving speed of operation of the semiconductor device.

On the other hand, for a long interconnection having the line length of3.0 mm or longer, inverter delay time is shorter when copperinterconnections 48 a, 48 b shown in FIG. 3 are used. This means thatfor a long interconnection, influence of line resistance on the inverterdelay time is increased. More specifically, reduction in evaluationvalue obtained by multiplying parasitic capacitance by line resistanceof the interconnection (hereinafter referred to as RC value) is moreeffective in reducing inverter delay time, that is, in improving speedof operation of the semiconductor device.

Here, interconnections 45 a and 45 b containing aluminum such as shownin FIG. 2 has specific resistance of about 3 μΩcm, and interconnections48 a and 48 b containing copper such as shown in FIG. 3 has specificresistance of about 2 μΩcm.

A semiconductor device manufactured in view of the findings describedabove is depicted in FIG. 5. The semiconductor device will be describedwith reference to FIG. 5.

Referring to FIG. 5, an isolating insulating film 2 is formed tosurround a conductive region on the main surface of a semiconductorsubstrate 1. On the conductive region on the main surface of thesemiconductor substrate 1, source/drain regions 3 a to 3 d are formed tobe adjacent to channel regions. On regions positioned above channelregions on the main surface of semiconductor substrate 1, gateelectrodes 5 a and 5 b are formed with gate insulating films 4 a and 4 binterposed. On sidewalls of gate electrodes 5 a and 5 b, sidewall films6 a to 6 d are formed. On gate electrodes 5 a and 5 b, sidewall films 6a to 6 d and source/drain regions 3 a to 3 d, a first interlayerinsulating film 7 is formed.

At regions positioned above source/drain regions 3 a to 3 d, contactholes 8 a to 8 d are formed by partially removing interlayer insulatingfilm 7. In contact holes 8 a to 8 d, tungsten plugs 9 a to 9 d areformed. On tungsten plugs 9 a to 9 d, interconnections (AlCuinterconnections) 10 a to 10 d formed of a material containingaluminum-copper alloy as a main component are formed as a first metallayer. On AlCu interconnections 10 a to 10 d and first interlayerinsulating film 7, a second interlayer insulating film 11 is formed.

At regions positioned above AlCu interconnections 10 b and 10 d, contactholes 12 a and 12 b are formed by partially removing interlayerinsulating film 11. In contact holes 12 a and 12 b, tungsten plugs 13 aand 13 b are formed. On tungsten plugs 13 a and 13 b, AlCuinterconnections 15 a, 15 c as a second metal layer are formed to beelectrically connected to tungsten plugs 13 a and 13 b. At a regionpositioned above AlCu interconnections 10 c, an AlCu interconnection 10b as the second metal layer is formed on an upper surface of interlayerinsulating film 11.

On AlCu interconnections 15 a to 15 c and the second interlayerinsulating film 11, a third interlayer insulating film 14 is formed. Atregions positioned above AlCu interconnections 15 a and 15 c, contactholes 16 a and 16 b are formed by partially removing interlayerinsulating film 14. In contact holes 16 a and 16 b, tungsten plugs 17 aand 17 b are formed. On tungsten plugs 17 a and 17 b, AlCuinterconnections 19 b and 19 d as a third metal layer are formed. On anupper surface of the third interlayer insulating film 14, AlCuinterconnections 19 a and 19 c are formed as the third metal layer. OnAlCu interconnections 19 a to 19 d and the third interlayer insulatingfilm 14, a fourth interlayer insulating film 18 is formed.

At regions positioned above AlCu interconnections 19 b and 19 d, contactholes 20 a and 20 b are formed by partially removing interlayerinsulating film 18. In contact holes 20 a and 20 b, tungsten plugs 21 aand 21 b are formed. On tungsten plugs 21 a and 21 b, AlCuinterconnections 23 a, 23 b as a fourth metal layer are formed. On thefourth interlayer insulating film 18 and AlCu interconnections 23 a, 23b, a fifth interlayer insulating film 22 is formed.

On the fifth interlayer insulating film 22, a silicon nitride film 24 isformed. On silicon nitride film 24, a sixth interlayer insulating film25 is formed. By partially removing interlayer insulating film 25,trenches 26 a to 26 c are formed. In trenches 26 a to 26 c, barriermetals 27 a to 27 c are formed. On barrier metals 27 a to 27 c,interconnections formed of a material mainly containing copper as thefifth metal layer (Cu interconnections) 28 a to 28 c are formed to filltrenches 26 a to 26 c.

On interlayer insulating film 25 and Cu interconnections 28 a to 28 c, asilicon nitride film 29 is formed. On silicon nitride film 29, a seventhinterlayer insulating film 30 is formed. On interlayer insulating film30, a silicon nitride film 31 is formed. On silicon nitride film 31, aneighth interlayer insulating film 32 is formed. By removing interlayerinsulating films 30 and 32 by dual Damascene process, trenches 33 a to33 c are formed. In trenches 33 a to 33 c, barrier metals 34 a to 34 care formed. On barrier metals 34 a to 34 c, Cu interconnections 35 a to35 c as a sixth metal layer are formed to fill trenches 33 a to 33 c. Oninterlayer insulating film 32 and Cu interconnections 35 a to 35 c, asilicon nitride film 36 is formed. On silicon nitride film 36, apassivation film 37 is formed.

AlCu interconnections 10 a to 10 d, 15 a to 15 c, 19 a to 19 d, 23 a and23 b as the first to fourth metal layers are short interconnectionshaving relatively short line lengths used for connecting elements in acircuit block, for example. In place of the interconnection formed of amaterial containing an aluminum-copper alloy as a main component (AlCuinterconnection), an interconnection formed of a material containingaluminum as a main component (Al interconnection) may be used.

Cu interconnections 28 a to 28 c and 35 a to 35 c as the fifth and sixthmetal layers are long interconnections having relatively long linelengths used for connecting circuit blocks, for example. Line resistanceof AlCu interconnections 10 a to 10 d, 15 a to 15 c, 19 a to 19 d, 23 aand 23 b (hereinafter referred to as lower layer interconnections) islarger than that of Cu interconnections 28 a to 28 c and 35 a to 35 c(hereinafter referred to as upper layer interconnections).

Interlayer insulating films 7, 11, 14, 18 and 22 which are insulatorsformed around the lower layer interconnections are of silicon oxide filmor silicon oxide film with fluorine added (SiOF). The insulator formedaround the upper layer interconnections include interlayer insulatingfilms 25 and 30 formed of silicon oxide film or fluorine added siliconoxide film (SiOF) and silicon nitride films 24, 29, 31 and 36. Siliconnitride films 24, 29, 31 and 36 have higher specific dielectric constantthan silicon oxide film or SiOF.

As a result, the specific dielectric constant of the insulators as awhole formed around the upper layer interconnections is higher than thespecific dielectric constant of the insulators formed around the lowerlayer interconnections. Interlayer insulating films 7, 11, 14, 18, 22,25, 30 and 32 may be formed of a silicon oxide film.

As can be seen from FIG. 5, when the line distance and cross sectionalarea of lines in the upper layer interconnections and lower layerinterconnections are approximately the same, parasitic capacitance ofthe lower layer interconnections can be made smaller than that of theupper layer interconnections, as the specific dielectric constant of theinsulators around the lower layer interconnections is lower than thespecific dielectric constant of the insulators formed around the upperlayer interconnections. Here, in the lower layer interconnections whichare short lines, reduction in parasitic capacitance of theinterconnections is especially effective in improving the speed ofoperation of the semiconductor device. As a result, in the semiconductordevice shown in FIG. 5, signal delay in the lower layerinterconnections, which are short lines, can effectively be prevented,and hence speed of operation of the semiconductor device can beimproved.

In the upper layer interconnections which are long lines, reduction inthe evaluation value (RC value) obtained by multiplying the parasiticcapacitance of the interconnections by the line resistance is moreeffective in improving the speed of signal transmission over theinterconnections. In the semiconductor device shown in FIG. 5, as Cuinterconnections are used as the upper layer interconnections, lineresistance of the upper layer interconnections can be made smaller thanthat of the lower layer interconnections. As a result, higher speed ofoperation of the semiconductor device is effectively attained.

Further, as the line resistance of the upper layer interconnections canbe made smaller, power consumption of the semiconductor device can bereduced.

As a result, a semiconductor device having an interconnection structureof superior electrical characteristics is obtained.

Further, as long lines and short lines are formed separately indifferent layers, circuit design of the semiconductor device can besimplified.

Further, as long lines and short lines are formed separately onsemiconductor substrate, interconnection structure of the semiconductordevice can be made simple as compared when long and short lines areformed mixedly.

Further, as the long lines and short lines are formed in differentlayers, materials of the interconnections and of insulators within onelayer can be made uniform. Therefore, even when the materials of theinterconnections and of the insulators are to be changed between thelong lines and the short lines, the steps of manufacturing thesemiconductor is not complicated. Therefore, increase in manufacturingcost of the semiconductor device can be prevented.

Further, as can be seen from FIG. 5, as short lines are formed in alayer closer to the main surface of the semiconductor substrate and longlines are formed in a layer positioned upper than the short lines, it isunnecessary to detour positions where short lines are formed, wheninterconnection path of the long lines is determined. This simplifiesinterconnection path of the long lines, and hence enables reduction inline length. As a result, the overall line length can be reduced. Thisprevents signal delay caused by long line length. Therefore, higherspeed of operation and lower power consumption of the semiconductordevice can be attained.

Further, as the AlCu interconnections and Al interconnections which havebeen conventionally used are employed as the lower layerinterconnections, the manufacturing apparatuses and know-how ofmanufacturing the conventional semiconductor devices can be utilized. Asa result, cost for new investment and research and development can bereduced. As a result, the cost of manufacturing the semiconductor devicecan be reduced and semiconductor devices can be manufactured readily.

Further, as the Cu interconnections having lower electrical resistancethan the conventional aluminum are used as the upper layerinterconnections, signal delay in the interconnections can further besuppressed, and higher speed of operation and lower power consumption ofthe semiconductor device can be attained.

Silicon nitride films 24, 29, 31 and 36 formed around the upper layerinterconnections are utilized as etching stopper in Damascene processwhen Cu interconnection 28 a to 28 c and 35 a to 35 c are formed.

Referring to FIG. 6, the semiconductor device is a CMOS logic circuitdevice and basically, the structure is similar to that of thesemiconductor device shown in FIG. 5. In the semiconductor device ofFIG. 6, however, four field effect transistors including source/drainregions 3 a to 3 h, gate insulating film 4 a to 4 d and gate electrodes5 a to 5 d, respectively are formed in the conductive region surroundedby the isolating insulating film 2 on the main surface of semiconductorsubstrate 1.

On the first interlayer insulating film 7, AlCu interconnections 10 a to10 g as the first metal layer are formed. AlCu interconnections 10 a to10 g are electrically connected to source/drain regions 3 a to 3 hthrough tungsten plugs 9 a to 9 h formed in contact holes 8 a to 8 h. Onthe second interlayer insulating film 11, AlCu interconnections 15 a to15 c as the second metal layer are formed. AlCu interconnections 15 a to15 c are electrically connected to AlCu interconnections 10 b, 10 d and10 f through tungsten plugs 13 a to 13 c formed in contact holes 12 a to12 c, respectively.

On the third interconnection insulating film 14, AlCu interconnections19 a to 19 g as the third metal layer are formed. AlCu interconnections19 b, 19 d and 19 f are electrically connected to AlCu interconnections15 a to 15 c through tungsten plugs 17 a to 17 c formed in contact holes16 a to 16 c, respectively. On the fourth interlayer insulating film 18,AlCu interconnections 23 a to 23 c as the fourth metal layer are formed.AlCu interconnections 23 a to 23 c are electrically connected to AlCuinterconnections 19 b, 19 d and 19 f through tungsten plugs 21 a to 21 cformed in contact holes 20 a to 20 c, respectively.

The structure on silicon nitride film 24 is approximately the same asthat of the semiconductor device shown in FIG. 5, except that Cuinterconnections 28 a to 28 c and 35 a to 35 c have wider line width andthicker film thickness than AlCu interconnections 10 a to 10 g, 15 a to15 c, 19 a to 19 g and 23 a to 23 c as the lower layer interconnections.Further, distance between lines of Cu interconnections 28 a to 28 c and35 a to 35 c as the upper layer interconnections is larger than thedistance between lines in the lower layer interconnections.

The semiconductor device having such a structure provides similareffects as the semiconductor device shown in FIG. 5. Further, as thecross sectional area of the upper layer interconnections is made largerthan the cross sectional area of the lower layer interconnections, lineresistance of the upper layer interconnections can further be decreased.As a result, the RC value of the upper layer interconnections canfurther be reduced, and hence, higher speed of operation and lower powerconsumption of the semiconductor device can be attained.

In the lower layer interconnections, cross sectional area of the shortlines (lower layer interconnections) is made small. More specifically,film thickness of short lines is reduced, so as to suppress increase inparasitic capacitance of interconnections even when the distance betweeninterconnections is reduced. When the cross sectional area of theinterconnections is reduced, line resistance increases. However, for ashort line, reduction in parasitic capacitance of the interconnection ismore effective in improving the speed of operation of the semiconductordevice. Therefore, in the semiconductor device such as shown in FIG. 6,higher speed of operation of the semiconductor device can be realized asa result. Even when line resistance is increased as the cross sectionalarea of the line is reduced, increase in line resistance caused byrelative reduction in cross sectional area of the line does not presenta significant problem, as the ON resistance of the transistorconstituting the semiconductor circuit is relatively large, i.e., aboutseveral kilo ohms.

Further, as can be seen from FIG. 6, by enlarging the distance betweenlines in the upper layer interconnections to be larger than the distancebetween lines in the lower layer interconnections, parasitic capacitanceof the lines in the upper layer interconnections can further be reduced.As a result, the RC value of the upper layer interconnections canfurther be reduced, and therefore higher speed of operation and lowerpower consumption of the semiconductor device can be attained.

Referring to FIG. 7, the semiconductor device includes an externalconnection region 38, an interconnection region 39, circuit blockregions 40 a to 40 d and a clock generating region 41. Interblockinterconnections 43 a to 43 c for connecting circuit block regions 40 ato 40 d with each other and a clock interconnection 42 for connectingclock generating region 41 to circuit block regions 40 a to 40 d areformed. The interblock interconnections 43 a to 43 c and clockinterconnection 42 are both long lines, which correspond to Cuinterconnections 28 a to 28 c and 35 a to 35 c shown in FIGS. 5 and 6.

In circuit block regions 40 b to 40 c, intrablock interconnections 44 ato 44 c for connecting elements formed in the circuit block regions areformed. The intrablock interconnections 44 a to 44 c are short lineshaving relatively short line length, and correspond to AlCuinterconnections 10 a to 10 g, 15 a to 15 c, 19 a to 19 g and 23 a to 23c shown in FIGS. 5 and 6.

Second Embodiment

Referring to FIG. 8, the method of designing a semiconductor circuit inaccordance with the present invention will be described.

Referring to FIG. 8, first, a plurality of different interconnectionstructures are prepared. Thereafter, a step (S1) of calculating totalparasitic capacitance (Ctot) of each of the plurality of differentinterconnection structures is performed. Thereafter, a step (S2 ) ofconfirming total parasitic capacitances of respective interconnectionstructures and selecting, as a material of short interconnectionstructure, the material used for that interconnection structure whichhas the minimum total parasitic capacitance is performed.

Here, as described in the first embodiment of the present invention, fora short line having relatively short line length, reduction in totalparasitic capacitance is especially effective in improving speed ofoperation of the semiconductor device. Therefore, by the method ofdesigning a semiconductor circuit such as shown in FIG. 8, the speed ofoperation of the semiconductor device can readily be improved.

Referring to FIG. 9, first, a plurality of different interconnectionstructures are prepared. Thereafter, a step (S1) for calculating totalparasitic capacitance (Ctot) and line resistance (R) of each of theplurality of different interconnection structures is performed.

Thereafter, a step (S2 ) for confirming product (RCtot: evaluationvalue) of the total parasitic capacitance (Ctot) and the line resistance(R) of the plurality of different interconnection structures, andselecting, as a material of a long line, the material used for thatinterconnection structure which has the minimum product (RCtot) isperformed.

Here, as described in the first embodiment of the present invention, fora long line having relatively long line length, reduction in the product(RCtot) of the total parasitic capacitance and the line resistance isespecially effective in improving the speed of operation and reducingpower consumption of the semiconductor device. Therefore, when themethod of designing a semiconductor circuit shown in FIG. 9 is used,higher speed of operation and lower power consumption of thesemiconductor device can readily be attained.

The interconnection structure will be described with reference to FIGS.10 to 12.

Referring to FIG. 10, on an interlayer insulating film 46 a formed ofSiOF, an Al interconnection 45 a is formed. On Al interconnection 45 a,Al interconnections 45 b to 45 d are formed with an interlayerinsulating film 46 b of SiOF interposed. Al interconnections 45 b to 45a are formed to extend in a direction approximately vertical to thedirection of extension of Al interconnection 45 a. On Alinterconnections 45 b to 45 d, an Al interconnection 45 e is formed withan interlayer insulating film 46 b interposed. Al interconnection 45 eis formed to extend in a direction approximately parallel to thedirection of extension of Al interconnection 45 a. On Al interconnection45 e, an interlayer insulating film 46 c of SiOF is formed.

Here, Al interconnections 45 a to 45 e each have the same film thicknessT1 and same line width W1. Al interconnections 45 b to 45 d are formedspaced by a line space S. Al interconnections 45 a to 45 e are formedspaced in the direction of its thickness, by a space TI1.

Here, the total parasitic capacitance Ctot of Al interconnection 45 c isrepresented as a sum of parasitic capacitance (2Cc) with Alinterconnections 45 b and 45 d adjacent in the horizontal direction,parasitic capacitance (Ctop) with Al interconnection 45 e, and parasiticcapacitance (Cbot) with Al interconnection 45 a.

Referring to FIG. 11, the interconnection structure basically has thesame structure of the first pattern of the interconnection structureshown in FIG. 10. In the interconnection structure of FIG. 11, however,copper is used as the material of the interconnections and therefore, inplace of Al interconnections, Cu interconnections 48 a to 48 e areformed. Further, as Damascene process is used for forming Cuinterconnections, silicon nitride films 47 a to 47 f used as the etchingstopper in Damascene method are formed above and below Cuinterconnections 48 a to 48 e. In the interconnection structure shown inFIG. 11, film thickness T1, line width W1, line space S and space TI1 inthe thickness direction of the interconnections of Cu interconnections48 a to 48 e are all the same as those of the first pattern of theinterconnection structure shown in FIG. 10. The material of interlayerinsulating films 46 a to 46 e are the same as those for the interlayerinsulating films 46 a to 46 c of the first pattern of theinterconnection structure shown in FIG. 10.

Referring to FIG. 12, the interconnection structure is basically thesame as the second pattern of the interconnection structure shown inFIG. 11. Film thickness T2 of Cu interconnections 49 a to 49 e is,however, determined to be smaller than the film thickness T1 of Cuinterconnections 48 a to 48 e of the interconnection structure shown inFIG. 11. This is because the film thickness T2 of Cu interconnections 49a to 49 e is determined such that Cu interconnections 49 a to 49 e haveapproximately the same line resistance as the line resistance of Alinterconnections 45 a to 45 e in the first pattern of theinterconnection structure shown in FIG. 10. The materials of interlayerinsulating films 46 a to 46 e are the same as those of interlayerinsulating films 46 a to 46 e of the second pattern of theinterconnection structure shown in FIG. 11.

Parasitic capacitances of the first to third patterns shown in FIGS. 10to 12 are calculated. FIG. 13 shows examples of calculated results.

Referring to FIG. 13, the abscissa represents film thickness of thesilicon nitride film in the interconnection structure, and the ordinaterepresents parasitic capacitance. Basic conditions for the results ofcalculation shown in FIG. 13 are as follows. Line width W1: 0.3 μm, linespace S: 0.3 μm, specific dielectric constant of interlayer insulatingfilm: 3.5, film thickness T1 of lines: 0.530 μm, and film thickness T2:0.397 μm. The black portions of the bar graph represent parasiticcapacitance (Cc) between lines in the horizontal direction, and whiteportions represent parasitic capacitances (Ctop, Cbot) in the verticaldirection.

Here, line space S is as small as 0.3 μm, because short line isconsidered here. As can be seen from FIG. 13, under the above describedconditions, the parasitic capacitance is the smallest when the Alinterconnection of the first pattern is used.

Here, the line space S may be selected to be approximately the same asminimum dimension in the step of photolithography used in themanufacturing process of the semiconductor circuit. In that case, anexample where the parasitic capacitance may possibly be the largest canbe verified, and therefore optimal interconnection structure can beselected.

In this manner, it is understood that the parasitic capacitance can bestbe reduced when the material of the interconnections and the material ofthe interlayer insulating films used in the first pattern shown in FIG.10 are used, for short lines. As a result, higher speed of operation ofthe semiconductor device can be attained.

The line space TI1 in the thickness direction is selected to be the sameas film thickness T1.

Referring to FIG. 14, the conditions of calculation here are as follows.Line width W1: 0.7 μm, line space S: 0.7 μm, specific dielectricconstant of interlayer insulating film: 3.5, film thickness T1 of theinterconnection: 1.330 μm, T2: 0.910 μm. Manner of representation of thegraph and so on are basically the same as those of FIG. 13.

Referring to FIG. 14, line space S and line width W1 here haverelatively large values of 0.7 μm and 0.7 μm, respectively, assuming along line. It can be understood that in such a case, parasiticcapacitance is smaller when the third pattern is used, where thicknessof silicon nitride film is 50 nm, rather than the first pattern using Alinterconnection.

In this manner, when a semiconductor device is manufactured using themethod of designing a semiconductor circuit in accordance with thepresent invention using the first to third patterns of theinterconnection structures such as shown in FIGS. 10 to 12, higher speedof operation and lower power consumption of the semiconductor device inwhich aluminum or copper is used as the material for interconnectionscan readily be attained.

Third Embodiment

FIGS. 16 and 17 show cross sectional structures of the AlCuinterconnection and Cu interconnection which are the base of the datashown in FIG. 15.

Referring to FIG. 16, barrier metals 51 a and 51 b are formed on theupper surface and bottom surface of AlCu interconnection 50. Total filmthickness of AlCu interconnection 50 and barrier metals 51 a and 51 bare considered the interconnection film thickness T, as shown in FIG.16. AlCu interconnection has the line width W.

Referring to FIG. 17, on side surfaces and bottom surface of Cuinterconnection 52, barrier metal 51 c is formed. The interconnectionfilm thickness T represents the total film thickness of Cuinterconnection 52 and barrier metal 51 c. Line width W represents thetotal line width of Cu interconnection 52 and barrier metal 51 c.

In the data shown in FIG. 15, line width W is a constant value of 0.3μm.

The basic conditions for the data of FIG. 18 are as follows. Line widthW: 0.3 μm, line space S: 0.3 μm and specific dielectric constant ofinterlayer insulating film: 0.35.

Referring to FIG. 15, it is understood that when the interlayer filmthickness T reduces, line resistance increases abruptly. One reason forthis is that line resistance increases in proportion to reduction incross sectional area of the interconnection. This is not the only cause,however, and there is the influence of barrier metals 51 a to 51 c (seeFIGS. 16 and 17 ) having relatively high resistance than the materialsof the interconnection. More specifically, barrier metals 51 a to 51 crepresented by TiN, for example, serve to prevent diffusion of theinterconnection material into the interlayer insulating film, and serveas an adhesion layer improving adhesiveness between materials. To ensuresuch functions, barrier metals 51 a to 51 c have lower limit thicknessto which the thickness of the barrier metals can be reduced. Even wheninterconnection film thickness T is reduced, barrier metals 51 a to 51 ccannot have their film thicknesses made smaller than the lower limit.Therefore, the smaller the interconnection film thickness T, the largerthe ratio of the thickness occupied by the barrier metal, which is ahigh resistance layer, with respect to the interconnection filmthickness T. As a result, the smaller the interconnection film thicknessT, the larger the line resistance becomes abruptly as a result, as shownin FIG. 15.

Conventionally, in the process of determining the thickness of barriermetals 51 a to 51 c, relation with the line resistance has not beenconsidered.

Accordingly, referring to FIG. 17, the inventors determined the totalfilm thickness x of barrier metal 51 c in the direction of the linewidths, to satisfy the relation of expression (12), where x representstotal film thickness of barrier metal 51 c in the direction of the linewidth, xmin represents minimum necessary film thickness of barrier metal51 c and K represents tolerable ratio of increase in resistance of theinterconnection layer when line width W is reduced by ΔW.

More specifically, the minimum value of the line width is considered asline width W. When the data that minimum value of line width W is 0.3μm, minimum necessary film thickness xmin of barrier metal 51 c is 20nm, ΔW is 0.015 μm (5% of the minimum value of line width W) andresistance has tolerable increase ratio of K of 1.1 are used, the totalfilm thickness x of barrier metal 51 c has to be within the range of 20nm to 135 nm. At this time, the total film thickness of barrier metal 51c can be made to 100 nm (assuming that thickness x/2 of barrier metal 51c is 50 nm).

Similarly, film thickness y in the direction of film thickness T ofbarrier metal 51 c is determined to satisfy the relation represented bythe expression (13) where ymin represents the minimum necessarythickness of barrier metal 51 c and K represents tolerable ratio ofincrease in line resistance when film thickness T of Cu is reduced byΔT.

For example, when minimum necessary film thickness ymin is 20 nm, setfilm thickness T is 0.55 μm, ΔT is 0.0275 μm (5% of set film thicknessT) and tolerable ratio of increase K is 1.1, thickness y of barriermetal 51 c may be at least 20 nm and at most 247.5 nm. Therefore, thevalue of 50 nm may be used as the thickness y of barrier metal 51 c.$\begin{matrix}{\frac{xmin}{W} \leqq \frac{x}{W} \leqq {1 - {\frac{K}{K - 1} \times \frac{\Delta \quad W}{W}}}} & (12) \\{\frac{ymin}{T} \leqq \frac{y}{T} \leqq {1 - {\frac{K}{K - 1} \times \frac{\Delta \quad T}{T}}}} & (13)\end{matrix}$

In this manner, it is possible to ensure the function of the barriermetal and, even when the thickness and line width of interconnectionlayers may vary because of variation in manufacturing, the ratio offluctuation of the line resistance of the interconnection layers cansurely be kept in the range of the designed value. Therefore,degradation in electrical characteristics of the semiconductor devicecan be prevented.

The structure of barrier metal 51 c shown in the third embodiment may beapplied to the first embodiment of the present invention to providesimilar effects.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

What is claimed is:
 1. A semiconductor device, comprising: asemiconductor substrate having a main surface; a conductive regionformed on the main surface of said semiconductor substrate; a firstinterconnection layer electrically connected to said conductive region,having relatively short line length and containing a material havingrelatively high electrical resistance; a first insulator formed tosurround said first interconnection layer and having relatively lowdielectric constant; a second interconnection layer formed on the mainsurface of said semiconductor substrate, containing a material havingelectrical resistance lower than the material contained in said firstinterconnection layer and having longer line length than said firstinterconnection layer; and a second insulator formed to surround saidsecond interconnection layer and having dielectric constant higher thansaid first insulator.
 2. The semiconductor device according to claim 1,wherein said second interconnection layer and said first interconnectionlayer are formed in different layers on the main surface of saidsemiconductor substrate.
 3. The semiconductor device according to claim2, wherein said second interconnection layer is formed in a layerpositioned above the layer in which said first interconnection layer isformed.
 4. The semiconductor device according to claim 1, wherein saidsecond insulator is positioned above and below said secondinterconnection layer.
 5. The semiconductor device according to claim 1,wherein said first interconnection layer contains aluminum, and saidsecond interconnection layer contains copper.
 6. The semiconductordevice according to claim 5, wherein said second insulator includes asilicon nitride film.
 7. The semiconductor device according to claim 6,wherein said first insulator includes a silicon oxide film.
 8. Thesemiconductor device according to claim 1, wherein said first insulatorincludes a silicon oxide film.
 9. The semiconductor device according toclaim 1, wherein cross sectional area of said second interconnectionlayer is larger than cross sectional area of said first interconnectionlayer.
 10. The semiconductor device according to claim 9, wherein saidfirst interconnection layer includes third and fourth interconnectionlayers, said second interconnection layer includes fifth and sixthinterconnection layers, and distance between said fifth and sixthinterconnection layers is larger than distance between said third andfourth interconnection layers.
 11. The semiconductor device according toclaim 1, wherein said first interconnection layer includes third andfourth interconnection layers, said second interconnection layerincludes fifth and sixth interconnection layers, and distance betweensaid fifth and sixth interconnection layers is larger than distancebetween said third and fourth interconnection layers.
 12. Thesemiconductor device according to claim 1, wherein said secondinterconnection layer has one side surface and the other side surfacepositioned opposite to said one side surface; a barrier metal layer isformed on said one side surface and said the other side surface; andtotal film thickness BM of said barrier metal layer is selected tosatisfy the relation of BMmin/W≦BM/W≦1−(K/(K−1))×ΔW/W where W representsset line width of said second interconnection layer in a directionapproximately vertical to said one side surface, BM represents totalfilm thickness of said barrier metal layer formed on said one sidesurface and said the other side surface, BMmin represents minimumnecessary film thickness of said barrier metal layer, and K representstolerable ratio of increase in resistance of said second interconnectionlayer when said set line width W is reduced by ΔW.
 13. The semiconductordevice according to claim 12, wherein said second interconnection layerhas a bottom surface; a bottom barrier metal layer is formed on saidbottom surface; and film thickness BMT of said bottom barrier metallayer is selected to satisfy the relation ofBMTmin/T≦BMT/T≦1−(KT/(KT−1))×ΔT/T where T represents set film thicknessof said second interconnection layer in a direction approximatelyvertical to said bottom surface, BMT represents film thickness of saidbottom barrier metal layer, BMTmin represents minimum necessary filmthickness of said bottom barrier metal layer, and KT representstolerable ratio of increase in resistance of said second interconnectionlayer when said set film thickness T is reduced by ΔT.